Meaning
Atomic composition analysis provides a depth profile of impurities within thin films by bombarding the sample with a primary ion beam. Scientists use secondary ion mass spectrometry to find extremely low concentrations of dopants within a semiconductor material. The tool creates a profile that shows how the concentration of an element changes from the surface down into the bulk material.
Ion Interaction
Focused beams of primary ions strike the sample and eject atoms from the lattice. During secondary ion mass spectrometry, these ejected particles are collected and sorted by their mass to charge ratio. This mechanism allows for the detection of elements at parts per billion levels, which is far beyond the reach of most other surface techniques.
Precise control of the beam energy determines the rate at which the material is removed.
Detection Sensitivity
Low detection limits make this method suitable for characterizing the junction depths in modern transistors. Because secondary ion mass spectrometry identifies almost every element in the periodic table, it is a versatile tool for failure analysis. The resulting profile confirms if the diffusion process met the design parameters for the device.
High sensitivity ensures that even the smallest amount of a contaminant is identified before it can ruin a production lot. Elemental mapping provides a visual representation of how different atoms are distributed within the layer.
Quality Specification
Detailed reports on the material composition are used to verify that a supplier has met the purity requirements for a raw wafer. If a shipment of silicon shows an unexpected spike in oxygen or carbon, secondary ion mass spectrometry provides the evidence for a rejection. Foundries include these profiles in their internal quality records to track the stability of their chemical vapor deposition tools.
Accurate mapping of the atomic structure ensures the reliability of the final integrated circuit.